Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy

H. Shibata*, Y. Makita, H. Katsumata, S. Kimura, Naoto Kobayashi, M. Hasegawa, S. Hishita, A. C. Beye, H. Takahashi, J. Tanabe, S. Uekusa

*この研究の対応する著者

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

We have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Si 1-xC x alloy thin films on Si using low-energy (100 - 300 eV) C + ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing I C, which suggests that the selective sputtering for deposited C atoms by incident C + ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing I C.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
出版社Materials Research Society
ページ517-522
ページ数6
402
出版ステータスPublished - 1996
外部発表はい
イベントProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
継続期間: 1995 11月 271995 11月 30

Other

OtherProceedings of the 1995 MRS Fall Symposium
CityBoston, MA, USA
Period95/11/2795/11/30

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

フィンガープリント

「Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル