FABRICATION OF GaAlAs 'WINDOW-STRIPE' MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS UTILISING Zn DIFFUSION-INDUCED ALLOYING.

Y. Suzuki, Y. Horikoshi, Masakazu Kobayashi, H. Okamoto

研究成果: Article

29 引用 (Scopus)

抄録

By utilizing Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three times in the ultimate output power was achieved as compared with an MQW laser without window.

元の言語English
ページ(範囲)383-384
ページ数2
ジャーナルElectronics Letters
20
発行部数9
出版物ステータスPublished - 1984 1 1
外部発表Yes

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Quantum well lasers
Semiconductor quantum wells
Heterojunctions
Laser windows
Lasers
Alloying

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

FABRICATION OF GaAlAs 'WINDOW-STRIPE' MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS UTILISING Zn DIFFUSION-INDUCED ALLOYING. / Suzuki, Y.; Horikoshi, Y.; Kobayashi, Masakazu; Okamoto, H.

:: Electronics Letters, 巻 20, 番号 9, 01.01.1984, p. 383-384.

研究成果: Article

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abstract = "By utilizing Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three times in the ultimate output power was achieved as compared with an MQW laser without window.",
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