Fabrication of hafnium silicate films by plasma-enhanced chemical vapor deposition

Hiromitsu Kato, Tomohiro Nango, Takeshi Miyagawa, Takahiro Katagiri, Yoshimichi Ohki, Kwang Soo Seol, Makoto Takiyama

研究成果: Paper査読

3 被引用数 (Scopus)

抄録

Hafnium silicate was deposited by plasma-enhanced chemical vapor deposition (PECVD). The deposited films are silicate with Si-O and Hf-O bonds and no Si-Hf bonds were detected. The relative permittivity increased from 3 to 15 when the hafnium content increased from 0 to atomic % to 21 atomic %.

Conference

ConferenceProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
国/地域Japan
CityHimeji
Period01/11/1901/11/22

ASJC Scopus subject areas

  • 工学(全般)
  • 材料科学(全般)

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