抄録
Diamond heteroepitaxial thin films were successfully synthesized on high-quality Ir(001)/MgO(001) substrates. In bias-enhanced nucleation, antenna-edge-type microwave plasma-assisted chemical vapor deposition (MPCVD) was used. Subsequently, the <001> selective and smoothing growth processes were conducted by conventional MPCVD. Reconstructed (2×1) structure patterns have been observed by reflection high-energy electron diffraction (RHEED), which indicated that the surface of the diamond film is very smooth. The mean roughness is less than 2 nm in a 10-μm2 area, as revealed by atomic force microscopy observations.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 478-481 |
| ページ数 | 4 |
| ジャーナル | Diamond and Related Materials |
| 巻 | 11 |
| 発行部数 | 3-6 |
| DOI | |
| 出版物ステータス | Published - 2002 3 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
これを引用
Fabrication of heteroepitaxial diamond thin films on Ir(001)/MgO(001) substrates using antenna-edge-type microwave plasma-assisted chemical vapor deposition. / Fujisaki, Toyokatsu; Tachiki, Minoru; Taniyama, Norikazu; Kudo, Minoru; Kawarada, Hiroshi.
：: Diamond and Related Materials, 巻 11, 番号 3-6, 03.2002, p. 478-481.研究成果: Article
}
TY - JOUR
T1 - Fabrication of heteroepitaxial diamond thin films on Ir(001)/MgO(001) substrates using antenna-edge-type microwave plasma-assisted chemical vapor deposition
AU - Fujisaki, Toyokatsu
AU - Tachiki, Minoru
AU - Taniyama, Norikazu
AU - Kudo, Minoru
AU - Kawarada, Hiroshi
PY - 2002/3
Y1 - 2002/3
N2 - Diamond heteroepitaxial thin films were successfully synthesized on high-quality Ir(001)/MgO(001) substrates. In bias-enhanced nucleation, antenna-edge-type microwave plasma-assisted chemical vapor deposition (MPCVD) was used. Subsequently, the <001> selective and smoothing growth processes were conducted by conventional MPCVD. Reconstructed (2×1) structure patterns have been observed by reflection high-energy electron diffraction (RHEED), which indicated that the surface of the diamond film is very smooth. The mean roughness is less than 2 nm in a 10-μm2 area, as revealed by atomic force microscopy observations.
AB - Diamond heteroepitaxial thin films were successfully synthesized on high-quality Ir(001)/MgO(001) substrates. In bias-enhanced nucleation, antenna-edge-type microwave plasma-assisted chemical vapor deposition (MPCVD) was used. Subsequently, the <001> selective and smoothing growth processes were conducted by conventional MPCVD. Reconstructed (2×1) structure patterns have been observed by reflection high-energy electron diffraction (RHEED), which indicated that the surface of the diamond film is very smooth. The mean roughness is less than 2 nm in a 10-μm2 area, as revealed by atomic force microscopy observations.
KW - Chemical vapor deposition
KW - Diamond
KW - Heteroepitaxy
KW - Iridium
UR - http://www.scopus.com/inward/record.url?scp=0036508431&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036508431&partnerID=8YFLogxK
U2 - 10.1016/S0925-9635(01)00654-9
DO - 10.1016/S0925-9635(01)00654-9
M3 - Article
AN - SCOPUS:0036508431
VL - 11
SP - 478
EP - 481
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 3-6
ER -