Fabrication of high-density copper microstructures using vacuum ultraviolet light lithography and hydrofluoric acid etching treatment

S. Asakura*, A. Hozumi, T. Yamaguchi, A. Fuwa

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

This paper describes a method to fabricate high-density copper microstructures on an indium tin oxide (ITO) surface. Lithography using 172-nm vacuum ultraviolet (VUV) light was found to not decompose the siloxane network at the bottom of a methyl-terminated organosilane self-assembled monolayer (SAM) deposited on an ITO substrate. When copper was electrodeposited onto this ITO surface covered a SAM/siloxane network pattern, it deposited selectively onto the siloxane regions. However, the density of the electrodeposited copper was low. By applying a wet hydrofluoric (HF) acid treatment for an appropriate time after the lithography, we could effectively remove the siloxane network without damaging the organosilane SAM. In this manner, we were able to successfully fabricate high-density copper microstructures with 35×35 μm2 patterns.

本文言語English
ページ(範囲)127-132
ページ数6
ジャーナルThin Solid Films
467
1-2
DOI
出版ステータスPublished - 2004 11月 22

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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