Fabrication of high-density copper microstructures using vacuum ultraviolet light lithography and hydrofluoric acid etching treatment

S. Asakura, A. Hozumi, Tadashi Yamaguchi, A. Fuwa

    研究成果: Article

    5 引用 (Scopus)

    抄録

    This paper describes a method to fabricate high-density copper microstructures on an indium tin oxide (ITO) surface. Lithography using 172-nm vacuum ultraviolet (VUV) light was found to not decompose the siloxane network at the bottom of a methyl-terminated organosilane self-assembled monolayer (SAM) deposited on an ITO substrate. When copper was electrodeposited onto this ITO surface covered a SAM/siloxane network pattern, it deposited selectively onto the siloxane regions. However, the density of the electrodeposited copper was low. By applying a wet hydrofluoric (HF) acid treatment for an appropriate time after the lithography, we could effectively remove the siloxane network without damaging the organosilane SAM. In this manner, we were able to successfully fabricate high-density copper microstructures with 35×35 μm2 patterns.

    元の言語English
    ページ(範囲)127-132
    ページ数6
    ジャーナルThin Solid Films
    467
    発行部数1-2
    DOI
    出版物ステータスPublished - 2004 11 22

    Fingerprint

    Siloxanes
    Hydrofluoric Acid
    Hydrofluoric acid
    siloxanes
    hydrofluoric acid
    ultraviolet radiation
    Lithography
    Copper
    Etching
    Self assembled monolayers
    lithography
    Tin oxides
    etching
    Vacuum
    indium oxides
    Indium
    tin oxides
    Fabrication
    copper
    vacuum

    ASJC Scopus subject areas

    • Surfaces, Coatings and Films
    • Condensed Matter Physics
    • Surfaces and Interfaces

    これを引用

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    title = "Fabrication of high-density copper microstructures using vacuum ultraviolet light lithography and hydrofluoric acid etching treatment",
    abstract = "This paper describes a method to fabricate high-density copper microstructures on an indium tin oxide (ITO) surface. Lithography using 172-nm vacuum ultraviolet (VUV) light was found to not decompose the siloxane network at the bottom of a methyl-terminated organosilane self-assembled monolayer (SAM) deposited on an ITO substrate. When copper was electrodeposited onto this ITO surface covered a SAM/siloxane network pattern, it deposited selectively onto the siloxane regions. However, the density of the electrodeposited copper was low. By applying a wet hydrofluoric (HF) acid treatment for an appropriate time after the lithography, we could effectively remove the siloxane network without damaging the organosilane SAM. In this manner, we were able to successfully fabricate high-density copper microstructures with 35×35 μm2 patterns.",
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    AU - Asakura, S.

    AU - Hozumi, A.

    AU - Yamaguchi, Tadashi

    AU - Fuwa, A.

    PY - 2004/11/22

    Y1 - 2004/11/22

    N2 - This paper describes a method to fabricate high-density copper microstructures on an indium tin oxide (ITO) surface. Lithography using 172-nm vacuum ultraviolet (VUV) light was found to not decompose the siloxane network at the bottom of a methyl-terminated organosilane self-assembled monolayer (SAM) deposited on an ITO substrate. When copper was electrodeposited onto this ITO surface covered a SAM/siloxane network pattern, it deposited selectively onto the siloxane regions. However, the density of the electrodeposited copper was low. By applying a wet hydrofluoric (HF) acid treatment for an appropriate time after the lithography, we could effectively remove the siloxane network without damaging the organosilane SAM. In this manner, we were able to successfully fabricate high-density copper microstructures with 35×35 μm2 patterns.

    AB - This paper describes a method to fabricate high-density copper microstructures on an indium tin oxide (ITO) surface. Lithography using 172-nm vacuum ultraviolet (VUV) light was found to not decompose the siloxane network at the bottom of a methyl-terminated organosilane self-assembled monolayer (SAM) deposited on an ITO substrate. When copper was electrodeposited onto this ITO surface covered a SAM/siloxane network pattern, it deposited selectively onto the siloxane regions. However, the density of the electrodeposited copper was low. By applying a wet hydrofluoric (HF) acid treatment for an appropriate time after the lithography, we could effectively remove the siloxane network without damaging the organosilane SAM. In this manner, we were able to successfully fabricate high-density copper microstructures with 35×35 μm2 patterns.

    KW - Copper

    KW - Etching

    KW - Self-assembled monolayer

    KW - Siloxane network

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