抄録
This paper describes a method to fabricate high-density copper microstructures on an indium tin oxide (ITO) surface. Lithography using 172-nm vacuum ultraviolet (VUV) light was found to not decompose the siloxane network at the bottom of a methyl-terminated organosilane self-assembled monolayer (SAM) deposited on an ITO substrate. When copper was electrodeposited onto this ITO surface covered a SAM/siloxane network pattern, it deposited selectively onto the siloxane regions. However, the density of the electrodeposited copper was low. By applying a wet hydrofluoric (HF) acid treatment for an appropriate time after the lithography, we could effectively remove the siloxane network without damaging the organosilane SAM. In this manner, we were able to successfully fabricate high-density copper microstructures with 35×35 μm2 patterns.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 127-132 |
| ページ数 | 6 |
| ジャーナル | Thin Solid Films |
| 巻 | 467 |
| 発行部数 | 1-2 |
| DOI | |
| 出版物ステータス | Published - 2004 11 22 |
Fingerprint
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
これを引用
Fabrication of high-density copper microstructures using vacuum ultraviolet light lithography and hydrofluoric acid etching treatment. / Asakura, S.; Hozumi, A.; Yamaguchi, Tadashi; Fuwa, A.
：: Thin Solid Films, 巻 467, 番号 1-2, 22.11.2004, p. 127-132.研究成果: Article
}
TY - JOUR
T1 - Fabrication of high-density copper microstructures using vacuum ultraviolet light lithography and hydrofluoric acid etching treatment
AU - Asakura, S.
AU - Hozumi, A.
AU - Yamaguchi, Tadashi
AU - Fuwa, A.
PY - 2004/11/22
Y1 - 2004/11/22
N2 - This paper describes a method to fabricate high-density copper microstructures on an indium tin oxide (ITO) surface. Lithography using 172-nm vacuum ultraviolet (VUV) light was found to not decompose the siloxane network at the bottom of a methyl-terminated organosilane self-assembled monolayer (SAM) deposited on an ITO substrate. When copper was electrodeposited onto this ITO surface covered a SAM/siloxane network pattern, it deposited selectively onto the siloxane regions. However, the density of the electrodeposited copper was low. By applying a wet hydrofluoric (HF) acid treatment for an appropriate time after the lithography, we could effectively remove the siloxane network without damaging the organosilane SAM. In this manner, we were able to successfully fabricate high-density copper microstructures with 35×35 μm2 patterns.
AB - This paper describes a method to fabricate high-density copper microstructures on an indium tin oxide (ITO) surface. Lithography using 172-nm vacuum ultraviolet (VUV) light was found to not decompose the siloxane network at the bottom of a methyl-terminated organosilane self-assembled monolayer (SAM) deposited on an ITO substrate. When copper was electrodeposited onto this ITO surface covered a SAM/siloxane network pattern, it deposited selectively onto the siloxane regions. However, the density of the electrodeposited copper was low. By applying a wet hydrofluoric (HF) acid treatment for an appropriate time after the lithography, we could effectively remove the siloxane network without damaging the organosilane SAM. In this manner, we were able to successfully fabricate high-density copper microstructures with 35×35 μm2 patterns.
KW - Copper
KW - Etching
KW - Self-assembled monolayer
KW - Siloxane network
UR - http://www.scopus.com/inward/record.url?scp=4444306314&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4444306314&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2004.05.008
DO - 10.1016/j.tsf.2004.05.008
M3 - Article
AN - SCOPUS:4444306314
VL - 467
SP - 127
EP - 132
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -