Fabrication of high-intensity light-emitting diodes using nanostructures by ultraviolet nanoimprint lithography and electrodeposition

Hiroshi Ono*, Yoshinobu Ono, Kenji Kasahara, Jun Mizuno, Shuichi Shoji

*この研究の対応する著者

研究成果: Article査読

25 被引用数 (Scopus)

抄録

Antireflection nanostructures for GaN light-emitting diodes (LEDs) were fabricated by reactive ion etching (RIE) using Ni as an etching mask. The Ni mask was formed by electrodeposition in combination with ultraviolet nanoimprint lithography (UVNIL). The antireflection nanostructures of 600 nm in depth, 300 nm in diameter, and 500 nm in pitch were fabricated on a GaN substrate. The radiant intensity of the LEDs was increased 1.5 times compared to that of a conventional LED. Since this method enables the fabrication of wafer-level GaN nanostructures with a low cost process, it is applicable to the fabrication of photonic crystals.

本文言語English
ページ(範囲)933-935
ページ数3
ジャーナルJapanese journal of applied physics
47
2 PART 1
DOI
出版ステータスPublished - 2008 2 15

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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