Fabrication of high-quality epitaxial Bi1-xSbx films by two-step growth using molecular beam epitaxy

K. Ueda*, Y. Hadate, K. Suzuki, H. Asano

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

High-quality epitaxial Bi1-xSbx (BiSb) films were formed by two-step growth using molecular beam epitaxy. The use of two-step growth, which involves lower-temperature growth at ~150 °C followed by higher-temperature (~250 °C) growth, and lattice-matched substrates such as BaF2 (111) are key to obtain high-quality BiSb films. The composition of the BiSb films can also be systematically tuned using this growth procedure. The epitaxial BiSb films showed higher crystallinity (full width at half maximum: ~0.69°) and higher mobility (~2100 cm2/Vs), which indicate that sufficient quality films were obtained. Such films are expected to pave the way for the fabrication of electronic devices using topological BiSb.

本文言語English
論文番号138361
ジャーナルThin Solid Films
713
DOI
出版ステータスPublished - 2020 11月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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