Fabrication of highly stacked quantum dot laser

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

研究成果: Conference contribution

抄録

We fabricated broad-area laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique; these diodes showed laser emission at 1529 nm in pulsed mode with a threshold current of 517.5 mA.

元の言語English
ホスト出版物のタイトルOptics InfoBase Conference Papers
出版者Optical Society of America
ISBN(印刷物)9781557528698
出版物ステータスPublished - 2009
外部発表Yes
イベントInternational Quantum Electronics Conference, IQEC 2009 - Baltimore, MD, United States
継続期間: 2009 5 312009 6 5

Other

OtherInternational Quantum Electronics Conference, IQEC 2009
United States
Baltimore, MD
期間09/5/3109/6/5

Fingerprint

Quantum dot lasers
Semiconductor lasers
semiconductor lasers
quantum dots
Fabrication
fabrication
threshold currents
Semiconductor quantum dots
lasers
Compensation and Redress

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

これを引用

Akahane, K., Yamamoto, N., & Kawanishi, T. (2009). Fabrication of highly stacked quantum dot laser. : Optics InfoBase Conference Papers Optical Society of America.

Fabrication of highly stacked quantum dot laser. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

Optics InfoBase Conference Papers. Optical Society of America, 2009.

研究成果: Conference contribution

Akahane, K, Yamamoto, N & Kawanishi, T 2009, Fabrication of highly stacked quantum dot laser. : Optics InfoBase Conference Papers. Optical Society of America, International Quantum Electronics Conference, IQEC 2009, Baltimore, MD, United States, 09/5/31.
Akahane K, Yamamoto N, Kawanishi T. Fabrication of highly stacked quantum dot laser. : Optics InfoBase Conference Papers. Optical Society of America. 2009
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya. / Fabrication of highly stacked quantum dot laser. Optics InfoBase Conference Papers. Optical Society of America, 2009.
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