Fabrication of InAs quantum dot stacked structure on InP(311)B substrate by digital embedding method

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

研究成果: Article

2 引用 (Scopus)

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Self-assembled InAs quantum dots (QDs) grown on an InP(311)B substrate were embedded using lattice-matched InAlAs/InGaAs superlattice with the digital embedding method. The thickness of quantum wells and barriers of the superlattice varied from 2 to 16 monolayers. The six layer stacking structures were successfully grown without any degradation of the QD and superlattice structure. The cross-sections of QDs embedded within the superlattice were visualized by scanning transmission microscope. The emission wavelength of the QDs was measured by photoluminescence and could be changed by changing the thickness of the superlattice.

元の言語English
記事番号22963
ページ(範囲)15-18
ページ数4
ジャーナルJournal of Crystal Growth
432
DOI
出版物ステータスPublished - 2015 12 15
外部発表Yes

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

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