Fabrication of metal-oxide-diamond field-effect transistors with submicron-sized gate length on boron-doped (111) H-terminated surfaces using electron beam evaporated SiO ₂ and Al ₂O ₃

Takeyasu Saito^*, Kyung Ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Zhi Quan Liu, Kazutaka Mitsuishi, Kazuo Furuya, Hideyo Okushi

^*この研究の対応する著者

基幹理工学部

研究成果: Article › 査読

27 被引用数 (Scopus)

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「Fabrication of metal-oxide-diamond field-effect transistors with submicron-sized gate length on boron-doped (111) H-terminated surfaces using electron beam evaporated SiO ₂ and Al ₂O ₃」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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Fabrication of metal-oxide-diamond field-effect transistors with submicron-sized gate length on boron-doped (111) H-terminated surfaces using electron beam evaporated SiO ₂ and Al ₂O ₃

フィンガープリント

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds

Fabrication of metal-oxide-diamond field-effect transistors with submicron-sized gate length on boron-doped (111) H-terminated surfaces using electron beam evaporated SiO 2 and Al 2O 3

フィンガープリント

Engineering & Materials Science

Physics & Astronomy

Chemical Compounds

Fabrication of metal-oxide-diamond field-effect transistors with submicron-sized gate length on boron-doped (111) H-terminated surfaces using electron beam evaporated SiO ₂ and Al ₂O ₃