Nanoscale dot patterns of cobalt alloy were formed on a silicon substrate using the ultra-violet nanoimprint lithography (UV-NIL) technology in combination with an electrodeposition process. We developed an improved UV-NIL equipment that can evacuate the chamber during imprinting. Using this equipment, we successfully imprinted 240-nm dot patterns with 500 nm pitch on a photocurable resin with high dimensional accuracy. Thickness control of the resin and imprinting under vacuum are important issues to obtain fine nanopatterns. Using these resin patterns as a mask layer, 300-nm cobalt alloy patterns are successfully formed by the electrodeposition process.
|ジャーナル||IEEJ Transactions on Electrical and Electronic Engineering|
|出版ステータス||Published - 2007 5月|
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