Fabrication of Organic Monolayer Modified Ion-Sensitive Field Effect Transistors with High Chemical Durability

Daisuke Niwa*, Takayuki Homma, Tetsuya Osaka

*この研究の対応する著者

研究成果査読

19 被引用数 (Scopus)

抄録

Fabrication of ion-sensitive field effect transistor (FET) with modified SiO2 gate by various organosilane monolayers was investigated. By precise control of the fabrication processes, the FETs modified with various functional monolayers were successfully formed on the same substrate. Each modified device indicates typical transistor property with a good stability in aqueous solution. The transistor with amino monolayer modified gate showed good pH sensitivity of 58 mV/pH, whereas the profiles of transistor with the perfluoro-alkyl monolayer modified gate kept constant in any pH solutions. These monolayer-modified devices are expected to be applied as an ion-sensitive and a reference electrode for sensing devices in the solution.

本文言語English
ページ(範囲)L105-L107
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
43
1 A/B
DOI
出版ステータスPublished - 2004 1 15

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

フィンガープリント

「Fabrication of Organic Monolayer Modified Ion-Sensitive Field Effect Transistors with High Chemical Durability」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル