Fabrication of p-β-Fe 1-xMn xSi 2/n-Si heterostructure diode and their electrical and optical properties

T. Takada*, H. Katsumata, Y. Makita, Naoto Kobayashi, M. Hasegawa, S. Uekusa

*この研究の対応する著者

研究成果: Conference contribution

8 被引用数 (Scopus)

抄録

We report on the fabrication of p-type β-FeSi 2 layers on n-type Si(100) substrates and the investigation of their p-n diode characteristics. Since our undoped β-FeSi 2 layers have typically shown n-type conductivity, the p-type layers were formed by the introduction of Mn impurity into β-FeSi 2 layers using two types of doping methods; one is an Electron-Beam-Deposition (EBD) procedure of Fe 1-XMn XSi 2(X < approximately 0.1) at room temperature and subsequent annealing at 900 °C for 1-120 min, where FeSi 2 ingots added with Mn (approximately 10 %) were used as starting materials. The other is a 55Mn +-implantation into β-FeSi 2 layers formed by EBD and subsequent annealing at 850 °C for 1-120 min. From van der Pauw measurements, p-type β-Fe 1-XMn XSi 2 layers with the resistivity of 0.0036-0.031 Ω·cm and hole mobility of 11.9-89.0 cm 2/V·sec were found to be successfully formed on n-Si substrates by both doping methods. The p-n diode characteristics of these heterostructure diodes were investigated by I-V and C-V measurements. The results indicate that the carrier distribution does not agree with either ideal one-side step or one-side slop junctions, although optical transmittance and reflectance measurements indicate that the silicide/Si interface is of good quality.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
出版社MRS
ページ267-272
ページ数6
478
出版ステータスPublished - 1997
外部発表はい
イベントProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
継続期間: 1997 3 311997 4 3

Other

OtherProceedings of the 1997 MRS Spring Symposium
CitySan Francisco, CA, USA
Period97/3/3197/4/3

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

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