Fabrication of SiN thin films by RF biased microwave plasma CVD

Naomi Itoh*, Kiyotaka Kato, Isamu Kato

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The purpose of this study is to clarify the effect of ion bombardment during the deposition of silcon nitride film. Since silicon nitride is an insulator, ion bombardment was controlled by RF bias to the substrate. When the effective value of the RF voltage was increased from 0 to 120 V, the self-bias, which is an indicator of the acceleration voltage of ions is impinging on the film, monotonically changed from 0 to -75 V. Therefore, when RF voltage is increased, the ion bombardment increased, hydrogen content in the film decreased, the content of nitrogen and silicon in the film increased, and the film density increased. This phenomenon is caused by the acceleration of surface reaction due to the thermal effect on the film surface by the increase of ion bombardment. The Si/N ratio was constant regardless of the RF voltage.

本文言語English
ページ(範囲)101-106
ページ数6
ジャーナルElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
74
7
出版ステータスPublished - 1991 7月

ASJC Scopus subject areas

  • 電子工学および電気工学

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