Fabrication of single atom emitters prepared by using surface diffusion of noble metals

Tatsuhiro Nakagawa; Eiji Rokuta; Hidekazu Murata; Hiroshi Shimoyama; Chuhei Oshima

doi:10.1109/IVNC.2012.6316907

Fabrication of single atom emitters prepared by using surface diffusion of noble metals

Tatsuhiro Nakagawa^*, Eiji Rokuta, Hidekazu Murata, Hiroshi Shimoyama, Chuhei Oshima

^*この研究の対応する著者

先進理工学部

研究成果: Conference contribution

抄録

We have developed a new method for preparing atomic-scale pyramids with three {211}-facet sides (nanopyramids) applied for single-atom emitters (SAEs). In the present method, atoms were electroplated only on the backward faces of the W tip, and supplied forward via surface diffusion promoted by elevating temperatures to 1000 K in UHV. With additional annealing at the same temperature, the tip end was covered with thin metal layers, and the nanopyramids were found to spontaneously grow. Opening angles of the FE electron beams were approximately ±2°. The present nanopyramids yielded FE fluctuations of about 1 %, which were lower than those exhibited by the nanopyramid produced with the previous electroplating method and comparable to those with vacuum deposition method.

本文言語	English
ホスト出版物のタイトル	Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012
ページ	216-217
ページ数	2
DOI	https://doi.org/10.1109/IVNC.2012.6316907
出版ステータス	Published - 2012
イベント	25th International Vacuum Nanoelectronics Conference, IVNC 2012 - Jeju 継続期間: 2012 7月 9 → 2012 7月 13

Other

Other	25th International Vacuum Nanoelectronics Conference, IVNC 2012
City	Jeju
Period	12/7/9 → 12/7/13

ASJC Scopus subject areas

電子工学および電気工学

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10.1109/IVNC.2012.6316907

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Nakagawa, T, Rokuta, E, Murata, H, Shimoyama, H & Oshima, C 2012, Fabrication of single atom emitters prepared by using surface diffusion of noble metals. in Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012., 6316907, pp. 216-217, 25th International Vacuum Nanoelectronics Conference, IVNC 2012, Jeju, 12/7/9. https://doi.org/10.1109/IVNC.2012.6316907

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title = "Fabrication of single atom emitters prepared by using surface diffusion of noble metals",

abstract = "We have developed a new method for preparing atomic-scale pyramids with three {211}-facet sides (nanopyramids) applied for single-atom emitters (SAEs). In the present method, atoms were electroplated only on the backward faces of the W tip, and supplied forward via surface diffusion promoted by elevating temperatures to 1000 K in UHV. With additional annealing at the same temperature, the tip end was covered with thin metal layers, and the nanopyramids were found to spontaneously grow. Opening angles of the FE electron beams were approximately ±2°. The present nanopyramids yielded FE fluctuations of about 1 %, which were lower than those exhibited by the nanopyramid produced with the previous electroplating method and comparable to those with vacuum deposition method.",

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author = "Tatsuhiro Nakagawa and Eiji Rokuta and Hidekazu Murata and Hiroshi Shimoyama and Chuhei Oshima",

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doi = "10.1109/IVNC.2012.6316907",

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AU - Nakagawa, Tatsuhiro

AU - Rokuta, Eiji

AU - Murata, Hidekazu

AU - Shimoyama, Hiroshi

AU - Oshima, Chuhei

PY - 2012

Y1 - 2012

N2 - We have developed a new method for preparing atomic-scale pyramids with three {211}-facet sides (nanopyramids) applied for single-atom emitters (SAEs). In the present method, atoms were electroplated only on the backward faces of the W tip, and supplied forward via surface diffusion promoted by elevating temperatures to 1000 K in UHV. With additional annealing at the same temperature, the tip end was covered with thin metal layers, and the nanopyramids were found to spontaneously grow. Opening angles of the FE electron beams were approximately ±2°. The present nanopyramids yielded FE fluctuations of about 1 %, which were lower than those exhibited by the nanopyramid produced with the previous electroplating method and comparable to those with vacuum deposition method.

AB - We have developed a new method for preparing atomic-scale pyramids with three {211}-facet sides (nanopyramids) applied for single-atom emitters (SAEs). In the present method, atoms were electroplated only on the backward faces of the W tip, and supplied forward via surface diffusion promoted by elevating temperatures to 1000 K in UHV. With additional annealing at the same temperature, the tip end was covered with thin metal layers, and the nanopyramids were found to spontaneously grow. Opening angles of the FE electron beams were approximately ±2°. The present nanopyramids yielded FE fluctuations of about 1 %, which were lower than those exhibited by the nanopyramid produced with the previous electroplating method and comparable to those with vacuum deposition method.

KW - FEM

KW - FIM

KW - nanopyramid

KW - single-atom emitter

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BT - Technical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

T2 - 25th International Vacuum Nanoelectronics Conference, IVNC 2012

Y2 - 9 July 2012 through 13 July 2012

ER -

Fabrication of single atom emitters prepared by using surface diffusion of noble metals

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