Fabrication of single atom emitters prepared by using surface diffusion of noble metals

Tatsuhiro Nakagawa*, Eiji Rokuta, Hidekazu Murata, Hiroshi Shimoyama, Chuhei Oshima

*この研究の対応する著者

研究成果: Conference contribution

抄録

We have developed a new method for preparing atomic-scale pyramids with three {211}-facet sides (nanopyramids) applied for single-atom emitters (SAEs). In the present method, atoms were electroplated only on the backward faces of the W tip, and supplied forward via surface diffusion promoted by elevating temperatures to 1000 K in UHV. With additional annealing at the same temperature, the tip end was covered with thin metal layers, and the nanopyramids were found to spontaneously grow. Opening angles of the FE electron beams were approximately ±2°. The present nanopyramids yielded FE fluctuations of about 1 %, which were lower than those exhibited by the nanopyramid produced with the previous electroplating method and comparable to those with vacuum deposition method.

本文言語English
ホスト出版物のタイトルTechnical Digest - 25th International Vacuum Nanoelectronics Conference, IVNC 2012
ページ216-217
ページ数2
DOI
出版ステータスPublished - 2012
イベント25th International Vacuum Nanoelectronics Conference, IVNC 2012 - Jeju
継続期間: 2012 7月 92012 7月 13

Other

Other25th International Vacuum Nanoelectronics Conference, IVNC 2012
CityJeju
Period12/7/912/7/13

ASJC Scopus subject areas

  • 電子工学および電気工学

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