抄録
Nanofabrication of electron devices based on the stability of hydrogen- and oxygen-terminated diamond surfaces is performed using an atomic force microscope modification technology. A nanotechnology involving the separation of CH and CO bonded surfaces has been applied to realize the single-hole transistors. The single-hole transistors operate at liquid-nitrogen temperature (77 K), where the Coulomb oscillation characteristics are clearly observed.
本文言語 | English |
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ページ(範囲) | 2854-2856 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 81 |
号 | 15 |
DOI | |
出版ステータス | Published - 2002 10月 7 |
ASJC Scopus subject areas
- 物理学および天文学(その他)