Fabrication of single-hole transistors on hydrogenated diamond surface using atomic force microscope

Minoru Tachiki; Hokuto Seo; Tokishige Banno; Yu Sumikawa; Hitoshi Umezawa; Hiroshi Kawarada

doi:10.1063/1.1513656

Fabrication of single-hole transistors on hydrogenated diamond surface using atomic force microscope

Minoru Tachiki^*, Hokuto Seo, Tokishige Banno, Yu Sumikawa, Hitoshi Umezawa, Hiroshi Kawarada

^*この研究の対応する著者

基幹理工学部

研究成果: Article › 査読

35 被引用数 (Scopus)

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Nanofabrication of electron devices based on the stability of hydrogen- and oxygen-terminated diamond surfaces is performed using an atomic force microscope modification technology. A nanotechnology involving the separation of CH and CO bonded surfaces has been applied to realize the single-hole transistors. The single-hole transistors operate at liquid-nitrogen temperature (77 K), where the Coulomb oscillation characteristics are clearly observed.

本文言語	English
ページ（範囲）	2854-2856
ページ数	3
ジャーナル	Applied Physics Letters
巻	81
号	15
DOI	https://doi.org/10.1063/1.1513656
出版ステータス	Published - 2002 10 7

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.1513656

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abstract = "Nanofabrication of electron devices based on the stability of hydrogen- and oxygen-terminated diamond surfaces is performed using an atomic force microscope modification technology. A nanotechnology involving the separation of CH and CO bonded surfaces has been applied to realize the single-hole transistors. The single-hole transistors operate at liquid-nitrogen temperature (77 K), where the Coulomb oscillation characteristics are clearly observed.",

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AU - Banno, Tokishige

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AU - Umezawa, Hitoshi

AU - Kawarada, Hiroshi

PY - 2002/10/7

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N2 - Nanofabrication of electron devices based on the stability of hydrogen- and oxygen-terminated diamond surfaces is performed using an atomic force microscope modification technology. A nanotechnology involving the separation of CH and CO bonded surfaces has been applied to realize the single-hole transistors. The single-hole transistors operate at liquid-nitrogen temperature (77 K), where the Coulomb oscillation characteristics are clearly observed.

AB - Nanofabrication of electron devices based on the stability of hydrogen- and oxygen-terminated diamond surfaces is performed using an atomic force microscope modification technology. A nanotechnology involving the separation of CH and CO bonded surfaces has been applied to realize the single-hole transistors. The single-hole transistors operate at liquid-nitrogen temperature (77 K), where the Coulomb oscillation characteristics are clearly observed.

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Fabrication of single-hole transistors on hydrogenated diamond surface using atomic force microscope

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