TY - JOUR
T1 - Fabrication of sub-100 nm wires and dots in GaAs/AlGaAs multiquantum well using focused ion beam lithography
AU - Kitada, Hideki
AU - Arimoto, Hiroshi
AU - Tackeuchi, Atsushi
AU - Yamaguchi, Yasuhiro
AU - Nakata, Yoshiaki
AU - Endoh, Akira
AU - Muto, Shunichi
PY - 1992
Y1 - 1992
N2 - We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.
AB - We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.
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U2 - 10.1143/jjap.31.l990
DO - 10.1143/jjap.31.l990
M3 - Article
AN - SCOPUS:0026898698
VL - 31
SP - L 990-L 991
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7 B
ER -