Fabrication of sub-100 nm wires and dots in GaAs/AlGaAs multiquantum well using focused ion beam lithography

Hideki Kitada*, Hiroshi Arimoto, Atsushi Tackeuchi, Yasuhiro Yamaguchi, Yoshiaki Nakata, Akira Endoh, Shunichi Muto

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.

本文言語English
ページ(範囲)L 990-L 991
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
31
7 B
出版ステータスPublished - 1992 12 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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