Fabrication of sub-100 nm wires and dots in GaAs/AlGaAs multiquantum well using focused ion beam lithography

Hideki Kitada; Hiroshi Arimoto; Atsushi Tackeuchi; Yasuhiro Yamaguchi; Yoshiaki Nakata; Akira Endoh; Shunichi Muto

Fabrication of sub-100 nm wires and dots in GaAs/AlGaAs multiquantum well using focused ion beam lithography

Hideki Kitada^*, Hiroshi Arimoto, Atsushi Tackeuchi, Yasuhiro Yamaguchi, Yoshiaki Nakata, Akira Endoh, Shunichi Muto

^*この研究の対応する著者

研究成果: Article › 査読

2 被引用数 (Scopus)

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We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO₂ film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO₂ mask laterally by wet etching.

本文言語	English
ページ（範囲）	L 990-L 991
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	31
号	7 B
出版ステータス	Published - 1992 12 1
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（その他）
物理学および天文学（全般）

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引用スタイル

Fabrication of sub-100 nm wires and dots in GaAs/AlGaAs multiquantum well using focused ion beam lithography. / Kitada, Hideki; Arimoto, Hiroshi; Tackeuchi, Atsushi; Yamaguchi, Yasuhiro; Nakata, Yoshiaki; Endoh, Akira; Muto, Shunichi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 31, No. 7 B, 01.12.1992, p. L 990-L 991.

研究成果: Article › 査読

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abstract = "We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.",

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AU - Kitada, Hideki

AU - Arimoto, Hiroshi

AU - Tackeuchi, Atsushi

AU - Yamaguchi, Yasuhiro

AU - Nakata, Yoshiaki

AU - Endoh, Akira

AU - Muto, Shunichi

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N2 - We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.

AB - We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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IS - 7 B

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Fabrication of sub-100 nm wires and dots in GaAs/AlGaAs multiquantum well using focused ion beam lithography

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ASJC Scopus subject areas

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