抄録
We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.
| 元の言語 | English |
|---|---|
| ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 31 |
| 発行部数 | 7 B |
| 出版物ステータス | Published - 1992 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
これを引用
Fabrication of sub-100 nm wires and dots in GaAs/AlGaAs multiquantum well using focused ion beam lithography. / Kitada, Hideki; Arimoto, Hiroshi; Tackeuchi, Atsushi; Yamaguchi, Yasuhiro; Nakata, Yoshiaki; Endoh, Akira; Muto, Shunichi.
：: Japanese Journal of Applied Physics, Part 2: Letters, 巻 31, 番号 7 B, 1992.研究成果: Article
}
TY - JOUR
T1 - Fabrication of sub-100 nm wires and dots in GaAs/AlGaAs multiquantum well using focused ion beam lithography
AU - Kitada, Hideki
AU - Arimoto, Hiroshi
AU - Tackeuchi, Atsushi
AU - Yamaguchi, Yasuhiro
AU - Nakata, Yoshiaki
AU - Endoh, Akira
AU - Muto, Shunichi
PY - 1992
Y1 - 1992
N2 - We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.
AB - We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.
UR - http://www.scopus.com/inward/record.url?scp=0026898698&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026898698&partnerID=8YFLogxK
M3 - Article
VL - 31
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7 B
ER -