Fabrication of sub-100 nm wires and dots in gaas/algaas multiquantum well using focused ion beam lithography

Hideki Kitada*, Hiroshi Arimoto, Atsushi Tackeuchi, Yasuhiro Yamaguchi, Yoshiaki Nakata, Akira Endoh, Shunichi Muto

*この研究の対応する著者

研究成果: Article査読

抄録

We describe a new lateral patterning technique using focused ion beam (FIB) lithography and also two subsequent pattern transfer processes consisting of reactive ion etching and reactive ion beam etching. In the FIB lithography we used a trilevel resist structure consisting of a CMS resist, an Al film, and an SiO2 film. This technique provided 60-nm-wide wires and 100 nm dots in a GaAs/AlGaAs multiquantum well (MQW). Twenty-five-nm-wide wires are also fabricated in GaAs by narrowing the SiO2 mask laterally by wet etching.

本文言語English
ページ(範囲)L990-L991
ジャーナルJapanese Journal of Applied Physics
31
7
DOI
出版ステータスPublished - 1992
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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