Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography

H. Arimoto; H. Kitada; A. Tackeuchi; A. Endho; Y. Yamaguchi; S. Muto

Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography

H. Arimoto^*, H. Kitada, A. Tackeuchi, A. Endho, Y. Yamaguchi, S. Muto

^*この研究の対応する著者

研究成果: Paper › 査読

2 被引用数 (Scopus)

抄録

We describe sub-100 nm wire fabrication in GaAs/AlGaAs multiquantum wells (MQW) by focused ion beam lithography and the time-resolved absorption measurements of the narrow wires. It is shown that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time of 11 ps. The authors have found a strong reduction of the recovery time with decreasing wire width.

本文言語	English
ページ	739-740
ページ数	2
出版ステータス	Published - 1991 1月 1
外部発表	はい
イベント	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn 継続期間: 1991 8月 27 → 1991 8月 29

Other

Other	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	91/8/27 → 91/8/29

ASJC Scopus subject areas

工学（全般）

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引用スタイル

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abstract = "We describe sub-100 nm wire fabrication in GaAs/AlGaAs multiquantum wells (MQW) by focused ion beam lithography and the time-resolved absorption measurements of the narrow wires. It is shown that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time of 11 ps. The authors have found a strong reduction of the recovery time with decreasing wire width.",

author = "H. Arimoto and H. Kitada and A. Tackeuchi and A. Endho and Y. Yamaguchi and S. Muto",

year = "1991",

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T1 - Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography

AU - Arimoto, H.

AU - Kitada, H.

AU - Tackeuchi, A.

AU - Endho, A.

AU - Yamaguchi, Y.

AU - Muto, S.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - We describe sub-100 nm wire fabrication in GaAs/AlGaAs multiquantum wells (MQW) by focused ion beam lithography and the time-resolved absorption measurements of the narrow wires. It is shown that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time of 11 ps. The authors have found a strong reduction of the recovery time with decreasing wire width.

AB - We describe sub-100 nm wire fabrication in GaAs/AlGaAs multiquantum wells (MQW) by focused ion beam lithography and the time-resolved absorption measurements of the narrow wires. It is shown that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time of 11 ps. The authors have found a strong reduction of the recovery time with decreasing wire width.

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T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

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ER -

Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography

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