We describe sub-100 nm wire fabrication in GaAs/AlGaAs multiquantum wells (MQW) by focused ion beam lithography and the time-resolved absorption measurements of the narrow wires. It is shown that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time of 11 ps. The authors have found a strong reduction of the recovery time with decreasing wire width.
|出版ステータス||Published - 1991 1月 1|
|イベント||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
継続期間: 1991 8月 27 → 1991 8月 29
|Other||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||91/8/27 → 91/8/29|
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