Fabrication of sub-100 nm wires in GaAs/AlGaAs multiquantum well by focused ion beam lithography

H. Arimoto, H. Kitada, A. Tackeuchi, A. Endho, Y. Yamaguchi, S. Muto

研究成果: Paper査読

2 被引用数 (Scopus)

抄録

We describe sub-100 nm wire fabrication in GaAs/AlGaAs multiquantum wells (MQW) by focused ion beam lithography and the time-resolved absorption measurements of the narrow wires. It is shown that the strong optical nonlinearity of excitons is preserved, even in wires of 130 nm width, and having a fast recovery time of 11 ps. The authors have found a strong reduction of the recovery time with decreasing wire width.

本文言語English
ページ739-740
ページ数2
出版ステータスPublished - 1991 1 1
外部発表はい
イベント23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
継続期間: 1991 8 271991 8 29

Other

Other23rd International Conference on Solid State Devices and Materials - SSDM '91
CityYokohama, Jpn
Period91/8/2791/8/29

ASJC Scopus subject areas

  • 工学(全般)

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