Diamond metal-insulator-semiconductor field effect transistors (MISFETs) with gates of 0.2-0.9 urn length and T-shape were realized by trilayer resist electron-beam lithography. FETs show a cut-off frequency (fT) of 11 GHz and maximum oscillation frequency (fmax) of 22 GHz. The f max/fT ratio of this FET was more than double that of FETs with a conventional gate structure and the same gate length. The fT of 11 GHz was half the maximum for diamond FETs due to parasitic capacitance at the gate-drain and gate-source electrodes. The T-shaped gate structure and the source-to-drain spacing must be optimized to reduce parasitic capacitance between each electrode.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2006 7月 7|
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