Fabrication of the low-resistive p-type ZnO by codoping method

M. Joseph, H. Tabata*, H. Saeki, K. Ueda, T. Kawai

*この研究の対応する著者

研究成果: Conference article査読

240 被引用数 (Scopus)

抄録

We have demonstrated the possibility of growing p-type ZnO films by a pulsed laser deposition technique combined with plasma gas source. The p-type ZnO film has been fabricated by passing N2O gas through an electron cyclotron resonance (ECR) or RF plasma source. N2O gas is effective to prevent "O" vacancy from occurring and introduce "N" as an acceptor, at the same time. With Ga and N codoping technique, we have observed a room temperature resistivity of 0.5 Ñ cm and a carrier concentration of 5 × 1019 cm-3 in ZnO film on glass substrate. Two-step growth, with a thin ZnO template layer formed at high temperature, is quite effective to realize a well crystallized growth at low temperature. The observed p-type ZnO films will open the door for practical applications in various oxide electronic devices.

本文言語English
ページ(範囲)140-148
ページ数9
ジャーナルPhysica B: Condensed Matter
302-303
DOI
出版ステータスPublished - 2001
外部発表はい
イベントYanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors - Awaji Island, Hyogo, Japan
継続期間: 2000 9月 242000 9月 27

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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