抄録
A fabrication method of uniform gratings on composite semiconductors using ultraviolet nanoimprint lithography (UV-NIL) is described. Since the grating pattern was batch transferred to the resin on substrates in this process, a high throughput fabrication process is expected. Both the dry etching process and the wet etching process can be performed for composite semiconductors patterning. The uniformity of the pattern height on a 3 inch GaAs substrate is better than the standard deviation of 2.6.
本文言語 | English |
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ページ(範囲) | 213-217 |
ページ数 | 5 |
ジャーナル | Journal of Photopolymer Science and Technology |
巻 | 22 |
号 | 2 |
DOI | |
出版ステータス | Published - 2009 |
ASJC Scopus subject areas
- ポリマーおよびプラスチック
- 有機化学
- 材料化学