The photopatterning of CdSe quantum dots (QDs) films is facilitated by preparing defect-rich QDs on selective sites on the film. A key step is UV irradiation in the presence of a polar solvent such as methanol in situ as a "developer" which readily dissolves trioctylphosphine oxide (TOPO) but not the QDs. This results in a dramatically reduced photopatterning time and irradiation intensity requirement. The optical property changes were examined by UV-vis and fluorescence spectroscopy. Furthermore, the photo-oxidized pattern of the CdSe QD film was readily observed by fluorescence microscopy. The chemical change due to attenuation of the P=O vibration of TOPO (due to its removal) could be detected by FT-IR imaging or FT-IR chemical mapping. Thus, the protocol is a simple yet effective way of patterning PL properties of QD films at much reduced exposure time compared to previously reported methods. It may find utility for a host of cell-based film assays and PL display device applications at various resolutions.
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