Fast recovery from excitonic absorption bleaching in type-ii gaas/algaas/alas tunneling biquantum well

Atsushi Tackeuchi*, Tsuguo Inata, Yoshihiro Sugiyama, Yoshiaki Nakata, Satoshi Nakamura, Shunichi Muto

*この研究の対応する著者

研究成果: Article査読

8 被引用数 (Scopus)

抄録

We propose the type-II tunneling biquantum-well (TBQ) structure which consists of a series of GaAs wells, AlGaAs barriers and AlAs layers. The type-II TBQ has no significant optical absorption except for the GaAs wells and shows fast recovery from excitonic absorption bleaching. In this structure, photoexcited electrons in the GaAs wells escape by tunneling through the AlGaAs barriers toward X states in the AlAs layers. The recovery time of excitonic absorption bleaching in the GaAs wells was reduced to 8 ps as the AlGaAs barrier thickness was decreased to 1.1 nm.

本文言語English
ページ(範囲)L669-L672
ジャーナルJapanese journal of applied physics
31
6
DOI
出版ステータスPublished - 1992 6月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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