TY - JOUR
T1 - Fast recovery of excitonic absorption bleaching in tunneling Bi‐quantum well
AU - Tackeuchi, Atsushi
AU - Inata, Tsuguo
AU - Muto, Shunichi
AU - Sugiyama, Yoshihiro
AU - Fujii, Toshio
PY - 1992
Y1 - 1992
N2 - Excitons in a quantum well of a semiconductor exhibit large optical nonlinearity. Therefore, a quantum well of a semiconductor is regarded as a key to realizing a device which can control light using light. However, the lifetime of excitons, which are generated optically, is several nanoseconds to several tens nanoseconds. Therefore, the nonlinear optical effect including absorption saturation continues for the lifetime of the excitons. To shorten the lifetime of the excitons without disturbing the optical nonlinearity, a new superlattice structure is proposed called the “tunneling bi‐quantum well.” This structure uses the tunneling effect and measures the absorption recovery time. As a result, it was found that in a tunneling bi‐quantum well in a GaAs/AlGaAs system with a barrier width of 1.7 nm, the absorption recovery time was as short as 1 ps.
AB - Excitons in a quantum well of a semiconductor exhibit large optical nonlinearity. Therefore, a quantum well of a semiconductor is regarded as a key to realizing a device which can control light using light. However, the lifetime of excitons, which are generated optically, is several nanoseconds to several tens nanoseconds. Therefore, the nonlinear optical effect including absorption saturation continues for the lifetime of the excitons. To shorten the lifetime of the excitons without disturbing the optical nonlinearity, a new superlattice structure is proposed called the “tunneling bi‐quantum well.” This structure uses the tunneling effect and measures the absorption recovery time. As a result, it was found that in a tunneling bi‐quantum well in a GaAs/AlGaAs system with a barrier width of 1.7 nm, the absorption recovery time was as short as 1 ps.
KW - AlGaAs
KW - GaAs
KW - Tunnel
KW - bleaching
KW - exciton
KW - quantum well
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U2 - 10.1002/ecjb.4420750503
DO - 10.1002/ecjb.4420750503
M3 - Article
AN - SCOPUS:0026862753
VL - 75
SP - 25
EP - 33
JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
SN - 8756-663X
IS - 5
ER -