Fast recovery of excitonic absorption peaks in tunneling bi-quantum-well structures

Atsushi Tackeuchi, Shunichi Muto, Tsuguo Inata, Toshio Fujii

研究成果: Article査読

25 被引用数 (Scopus)

抄録

Fast recovery of the excitonic absorption peak in “tunneling bi-quantum-well structures” is proposed and demonstrated for the first time. A tunneling bi-quantum-well consists of the repeated structure of narrow and wide wells coupled quantum-mechanically, enabling photo-excited carriers in the narrow well to tunnel toward the wide well with a relaxation time much faster than the radiative recombination time of carriers. The recovery time was reduced to 18 ps using the 4.0 nm-thick tunneling barrier and strongly depends on the barrier thickness as would be expected from electron tunneling.

本文言語English
ページ(範囲)L1098-L1100
ジャーナルJapanese journal of applied physics
28
7 A
DOI
出版ステータスPublished - 1989 7月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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