FBC's potential of 6F2 single cell operation in multi-gbit memories confirmed by a newly developed method for measuring signal sense margin

Fumiyoshi Matsuoka*, Takashi Ohsawa, Tomoki Higashi, Hironobu Furuhashi, Kosuke Hatsuda, Katsuyuki Fujita, Ryo Fukuda, Nobuyuki Ikumi, Tomoaki Shino, Yoshihiro Minami, Hiroomi Nakajima, Takeshi Hamamoto, Akihiro Nitayama, Yohji Watanabe

*この研究の対応する著者

研究成果: Conference article査読

15 被引用数 (Scopus)

抄録

A 6F2 single cell (one-cell-per-bit) operation of the floating body RAM (FBRAM) is successfully demonstrated for the first time with more than 60% yield of 16Mbit area in a wafer. The signal sense margin (SSM) at actual read conditions is found to well back up the functional results. The parasitic resistance in the source and drain formed under the FBC's spacers can be optimized for making the SSM as large as 8μA at ±4.5σ without sacrificing the retention time.

本文言語English
論文番号4418857
ページ(範囲)39-42
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting, IEDM
DOI
出版ステータスPublished - 2007 12月 1
外部発表はい
イベント2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States
継続期間: 2007 12月 102007 12月 12

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

フィンガープリント

「FBC's potential of 6F2 single cell operation in multi-gbit memories confirmed by a newly developed method for measuring signal sense margin」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル