Feasibility study of all-SiC pressure sensor fabrication without deep etching

Fengwen Mu, Yechao Sun, Haiping Shang, Yinghui Wang, Tadatomo Suga, Weibing Wang, Dapeng Chen

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

A novel approach to achieving an all-SiC pressure sensor for harsh environment applications has been proposed. A combination of short-Time etching, wafer thinning and wafer bonding processes is employed to form a sealed vacuum cavity structure in order to avoid an undesirable deep etching process. To demonstrate its feasibility, the thinning of SiC wafer and the bonding between a SiC patterned wafer and a bare wafer have been attempted. The SiC wafer could be thinned down to 60 μm in thickness via bonding to a Si wafer for support, and the patterned SiC wafer could be successfully bonded to a bare SiC wafer with a seamless interface, which indicates the feasibility of this approach.

本文言語English
ホスト出版物のタイトル2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
出版社Institute of Electrical and Electronics Engineers Inc.
ページ558-561
ページ数4
ISBN(電子版)9784990218850
DOI
出版ステータスPublished - 2018 6 6
外部発表はい
イベント2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018 - Kuwana, Mie, Japan
継続期間: 2018 4 172018 4 21

出版物シリーズ

名前2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018

Other

Other2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
国/地域Japan
CityKuwana, Mie
Period18/4/1718/4/21

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • ポリマーおよびプラスチック

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