The feasibility of titanium oxide (TiOx) encapsulation of the source/drain metal contacts of diamond solution-gate field-effect transistor (SGFET) for biosensor applications is explored. The SGFETs fabricated by this method show excellent FET characteristics. For comparison, the electrical characteristics performance of SGFET TiOx encapsulated devices with two different channel lengths of 100 and 1.5 μm is investigated. The miniature device with a channel length of 1.5 μm exhibits remarkable enhancement of the maximum output current and transconductance (gm) to 3000 μA mm−1 and 11.3 mS mm−1, respectively. Furthermore, the scaling gm behavior of diamond SGFETs is experimentally studied by means of the channel length for the first time. The gm is enhanced when the channel length is reduced. The double-layer capacitance of the diamond SGFET devices with channel mobility of 6–11 cm2 (V s)−1 is estimated to be 3–5 μF cm−2 across the channel length which is adequate for biosensor applications.
|ジャーナル||Physica Status Solidi (A) Applications and Materials Science|
|出版ステータス||Published - 2020 12月|
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