Feasibility Study of TiOx Encapsulation of Diamond Solution-Gate Field-Effect Transistor Metal Contacts for Miniature Biosensor Applications

Shaili Falina, Kyosuke Tanabe, Yutaro Iyama, Kaito Tadenuma, Te Bi, Yu Hao Chang, Asrulnizam Abd Manaf, Mohd Syamsul*, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

抄録

The feasibility of titanium oxide (TiOx) encapsulation of the source/drain metal contacts of diamond solution-gate field-effect transistor (SGFET) for biosensor applications is explored. The SGFETs fabricated by this method show excellent FET characteristics. For comparison, the electrical characteristics performance of SGFET TiOx encapsulated devices with two different channel lengths of 100 and 1.5 μm is investigated. The miniature device with a channel length of 1.5 μm exhibits remarkable enhancement of the maximum output current and transconductance (gm) to 3000 μA mm−1 and 11.3 mS mm−1, respectively. Furthermore, the scaling gm behavior of diamond SGFETs is experimentally studied by means of the channel length for the first time. The gm is enhanced when the channel length is reduced. The double-layer capacitance of the diamond SGFET devices with channel mobility of 6–11 cm2 (V s)−1 is estimated to be 3–5 μF cm−2 across the channel length which is adequate for biosensor applications.

本文言語English
論文番号2000634
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
217
23
DOI
出版ステータスPublished - 2020 12月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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