抄録
Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO3∥(111)SrTiO3 substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi4Ti3O12 thin films was smaller as compared to the Nd substituted thin films.
本文言語 | English |
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ページ(範囲) | 1707-1712 |
ページ数 | 6 |
ジャーナル | Journal of Applied Physics |
巻 | 93 |
号 | 3 |
DOI | |
出版ステータス | Published - 2003 2月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)
- 物理学および天文学(全般)