Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition

Takashi Kojima; Takayuki Watanabe; Hiroshi Funakubo; Keisuke Saito; Minoru Osada; Masato Kakihana

doi:10.1063/1.1536010

Ferroelectric properties of lanthanide-substituted Bi₄Ti₃O₁₂ epitaxial thin films grown by metalorganic chemical vapor deposition

Takashi Kojima, Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito, Minoru Osada, Masato Kakihana

研究成果: Article › 査読

58 被引用数 (Scopus)

抄録

Ferroelectric properties of lanthanide-substituted Bi₄Ti₃O₁₂ epitaxial thin films were analyzed. The thin films were grown by metalorganic chemical vapor deposition on (111)SrRuO₃∥(111)SrTiO₃ substrates. The analysis showed that the remanent polarization (Pr) value of La substituted Bi₄Ti₃O₁₂ thin films was smaller as compared to the Nd substituted thin films.

本文言語	English
ページ（範囲）	1707-1712
ページ数	6
ジャーナル	Journal of Applied Physics
巻	93
号	3
DOI	https://doi.org/10.1063/1.1536010
出版ステータス	Published - 2003 2 1
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）
物理学および天文学（全般）

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10.1063/1.1536010

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引用スタイル

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