Field effect of photoluminescence from excitons bound to nitrogen atom pairs in GaAs

Koji Onomitsu*, Atsushi Kawaharazuka, Takehito Okabe, Toshiki Makimoto, Hisao Saito, Yoshiji Horikoshi

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Field effect of photoluminescence due to excitons bound to nitrogen atom pairs in GaAs has been investigated for uniformly doped and atomic-layer-doped samples grown on (001) GaAs substrates. The intensities of excitonic photoluminescence lines due to distant nitrogen atom pairs decrease much more rapidly than those from closer pairs when the electric field is increased. In addition, photoluminescence due to the nearest neighbor pairs in atomic-layer-doped samples exhibits much more stable characteristics than that of uniformly doped samples against an applied electric field. This stability is observed only when the electric field is applied in either the [110] or [1̄10] direction. This anomalous field effect can be explained by considering the electron trapping process to the isoelectric N traps modulated by the electric field.

本文言語English
ページ(範囲)5503-5506
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
9
DOI
出版ステータスPublished - 2002 9

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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