抄録
Field effect of photoluminescence due to excitons bound to nitrogen atom pairs in GaAs has been investigated for uniformly doped and atomic-layer-doped samples grown on (001) GaAs substrates. The intensities of excitonic photoluminescence lines due to distant nitrogen atom pairs decrease much more rapidly than those from closer pairs when the electric field is increased. In addition, photoluminescence due to the nearest neighbor pairs in atomic-layer-doped samples exhibits much more stable characteristics than that of uniformly doped samples against an applied electric field. This stability is observed only when the electric field is applied in either the [110] or [1̄10] direction. This anomalous field effect can be explained by considering the electron trapping process to the isoelectric N traps modulated by the electric field.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 5503-5506 |
| ページ数 | 4 |
| ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| 巻 | 41 |
| 発行部数 | 9 |
| 出版物ステータス | Published - 2002 9 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
これを引用
Field effect of photoluminescence from excitons bound to nitrogen atom pairs in GaAs. / Onomitsu, Koji; Kawaharazuka, Atsushi; Okabe, Takehito; Makimoto, Toshiki; Saito, Hisao; Horikoshi, Yoshiji.
：: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 41, 番号 9, 09.2002, p. 5503-5506.研究成果: Article
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TY - JOUR
T1 - Field effect of photoluminescence from excitons bound to nitrogen atom pairs in GaAs
AU - Onomitsu, Koji
AU - Kawaharazuka, Atsushi
AU - Okabe, Takehito
AU - Makimoto, Toshiki
AU - Saito, Hisao
AU - Horikoshi, Yoshiji
PY - 2002/9
Y1 - 2002/9
N2 - Field effect of photoluminescence due to excitons bound to nitrogen atom pairs in GaAs has been investigated for uniformly doped and atomic-layer-doped samples grown on (001) GaAs substrates. The intensities of excitonic photoluminescence lines due to distant nitrogen atom pairs decrease much more rapidly than those from closer pairs when the electric field is increased. In addition, photoluminescence due to the nearest neighbor pairs in atomic-layer-doped samples exhibits much more stable characteristics than that of uniformly doped samples against an applied electric field. This stability is observed only when the electric field is applied in either the [110] or [1̄10] direction. This anomalous field effect can be explained by considering the electron trapping process to the isoelectric N traps modulated by the electric field.
AB - Field effect of photoluminescence due to excitons bound to nitrogen atom pairs in GaAs has been investigated for uniformly doped and atomic-layer-doped samples grown on (001) GaAs substrates. The intensities of excitonic photoluminescence lines due to distant nitrogen atom pairs decrease much more rapidly than those from closer pairs when the electric field is increased. In addition, photoluminescence due to the nearest neighbor pairs in atomic-layer-doped samples exhibits much more stable characteristics than that of uniformly doped samples against an applied electric field. This stability is observed only when the electric field is applied in either the [110] or [1̄10] direction. This anomalous field effect can be explained by considering the electron trapping process to the isoelectric N traps modulated by the electric field.
KW - Atomic-layer doping
KW - Electric field dependence
KW - GaAs
KW - Isoelectronic traps
KW - MOVPE
KW - Nitrogen pairs
KW - Photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=0036756961&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036756961&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0036756961
VL - 41
SP - 5503
EP - 5506
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9
ER -