Field-effect trap-level-distribution model of dynamic random access memory data retention characteristics

A. Hiraiwa*, M. Ogasawara, N. Natsuaki, Y. Itoh, H. Iwai

*この研究の対応する著者

研究成果: Article査読

10 被引用数 (Scopus)

抄録

Dynamic random access memory data retention characteristics were investigated as a function of operating voltage. Based on a statistical process, called the trap-level-distribution model, which was proposed in our previous report, we further assumed that the junction leakage current by Shockley-Read-Hall process is enhanced by an electric field through the trap-assisted-tunneling process. We incorporated into the model two processes that cause variation in the electric field at the traps; the variation of electric field itself and the spatial trap distribution. By comparing the Monte Carlo and analytical calculations with the experimental results, we found that the retention time distribution is not only caused by the energy level and spatial distributions of the traps, but by the space-charge-region field distribution among the cells. A possible origin of the field distribution is the variation of dopant profile among the junctions.

本文言語English
ページ(範囲)7053-7060
ページ数8
ジャーナルJournal of Applied Physics
81
10
出版ステータスPublished - 1997 5月 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)
  • 物理学および天文学(その他)

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