Field emission properties of heavily Si-doped AIN in triode-type display structure

Yoshitaka Taniyasu; Makoto Kasu; Toshiki Makimoto

doi:10.1063/1.1689398

Field emission properties of heavily Si-doped AIN in triode-type display structure

Yoshitaka Taniyasu^*, Makoto Kasu, Toshiki Makimoto

^*この研究の対応する著者

研究成果: Article › 査読

91 被引用数 (Scopus)

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A triode-type field emission display using heavily Si-doped AlN was reported. The device consists of a field emitter, mesh grid, and an anode screen. The device exhibits a low turn-on electric field of 11 V/μm. It was found that the field emission current increases with an increase in grid voltage. Results show that the field emission current is a stable one.

本文言語	English
ページ（範囲）	2115-2117
ページ数	3
ジャーナル	Applied Physics Letters
巻	84
号	12
DOI	https://doi.org/10.1063/1.1689398
出版ステータス	Published - 2004 3月 22
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.1689398

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abstract = "A triode-type field emission display using heavily Si-doped AlN was reported. The device consists of a field emitter, mesh grid, and an anode screen. The device exhibits a low turn-on electric field of 11 V/μm. It was found that the field emission current increases with an increase in grid voltage. Results show that the field emission current is a stable one.",

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AB - A triode-type field emission display using heavily Si-doped AlN was reported. The device consists of a field emitter, mesh grid, and an anode screen. The device exhibits a low turn-on electric field of 11 V/μm. It was found that the field emission current increases with an increase in grid voltage. Results show that the field emission current is a stable one.

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Field emission properties of heavily Si-doped AIN in triode-type display structure

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