抄録
A triode-type field emission display using heavily Si-doped AlN was reported. The device consists of a field emitter, mesh grid, and an anode screen. The device exhibits a low turn-on electric field of 11 V/μm. It was found that the field emission current increases with an increase in grid voltage. Results show that the field emission current is a stable one.
本文言語 | English |
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ページ(範囲) | 2115-2117 |
ページ数 | 3 |
ジャーナル | Applied Physics Letters |
巻 | 84 |
号 | 12 |
DOI | |
出版ステータス | Published - 2004 3月 22 |
外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学(その他)