Film growth of c-axis tilted ScAlN on the sapphire substrate for SAW devices

Shohei Tokuda, Shinji Takayanagi, Mami Matsukawa, Takahiko Yanagitani

    研究成果: Conference contribution

    1 被引用数 (Scopus)

    抄録

    Recently, it was shown that heavily doped AlN film possess the high piezoelectricity by Akiyama et al [1]. On the other hand, SAW devices were widely used as filters and sensors. Among them, SAW in ScAlN film is attracting a lot of attention because this SAW devices have high electromechanical coupling coefficient K2. We analyzed the K2 value in Sc0.4Al0.6N was increased by c-axis tilted angle θ becoming bigger [2]. In this study, changing the angle of c-axis tilted ScAlN films, we have tried to improve the K2 value of SAWs in c-axis tilted ScAlN/R-sapphire.

    本文言語English
    ホスト出版物のタイトル2017 IEEE International Ultrasonics Symposium, IUS 2017
    出版社IEEE Computer Society
    ISBN(電子版)9781538633830
    DOI
    出版ステータスPublished - 2017 10 31
    イベント2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States
    継続期間: 2017 9 62017 9 9

    Other

    Other2017 IEEE International Ultrasonics Symposium, IUS 2017
    国/地域United States
    CityWashington
    Period17/9/617/9/9

    ASJC Scopus subject areas

    • 音響学および超音波学

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