Fine-pitch wire ball bonding technology

Kohei Tatsumi, Kohzo Onoue, Tomohiro Uno, Osamu Kitamura

研究成果: Article

抜粋

Advancing performance and diminishing size of semiconductors have increased the density of semiconductor packaging year by year. Wire bonding is in widespread use as technology for connecting semiconductor chip electrodes to external terminals. With development efforts expended to meet the higher packaging density requirements, wire bonding is now commercialized at a wire pitch of up to 90 μm. Wire bonding technology for a 50-μm wire pitch will be under development by the year 2000. This article presents the results of research conducted concerning the reduction in the diameter of the ball formed on the end of the wire, decrease in the tip radius of the capillary, and increase in Young's modulus of the wire. These study results verify the feasibility of wire bonding at pitches of 70 and 60 μm. The concept of wire bond reliability is also clarified.

元の言語English
ページ(範囲)39-44
ページ数6
ジャーナルNippon Steel Technical Report
発行部数73
出版物ステータスPublished - 1997 4
外部発表Yes

ASJC Scopus subject areas

  • Metals and Alloys

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  • これを引用

    Tatsumi, K., Onoue, K., Uno, T., & Kitamura, O. (1997). Fine-pitch wire ball bonding technology. Nippon Steel Technical Report, (73), 39-44.