First principles and macroscopic theories of semiconductor epitaxial growth

Kenji Shiraishi, Norihisa Oyama, Ko Okajima, Nori Miyagishima, Kyozaburo Takeda, Hiroshi Yamaguchi, Tomonori Ito, Takahisa Ohno

研究成果: Article査読

14 被引用数 (Scopus)

抄録

We discuss the relation between microscopic mechanism and macroscopic growth behavior. First, we introduce a macroscopic theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov islands and the misfit dislocations. This theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Next, we have formulated a procedure for determining the phenomenological parameters that includes atomistic informations. The critical thickness of InAs/GaAs(1 1 0) heteroepitaxy obtained by this procedure is in good agreement with the scanning tunneling microscopy (STM) observations.

本文言語English
ページ(範囲)206-211
ページ数6
ジャーナルJournal of Crystal Growth
237-239
1 4 I
DOI
出版ステータスPublished - 2002 4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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