Floating body RAM technology and its scalability to 32nm node and beyond

Tomoaki Shino, Naoki Kusunoki, Tomoki Higashi, Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda, Nobuyuki Ikumi, Fumiyoshi Matsuoka, Yasuyuki Kajitani, Ryo Fukuda, Yoji Watanabe, Yoshihiro Minami, Atsushi Sakamoto, Jun Nishimura, Hiroomi Nakajima, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

研究成果: Conference contribution

28 被引用数 (Scopus)

抄録

Technologies and improved performance of the Floating Body RAM are demonstrated. Reducing SOI thickness to 43nm, a 16Mb chip yield of 68% has been obtained. Device simulation proves that the Floating Body Cell is scalable to the 32nm node keeping signal margin (threshold voltage difference) and data retention time constant.

本文言語English
ホスト出版物のタイトル2006 International Electron Devices Meeting Technical Digest, IEDM
DOI
出版ステータスPublished - 2006 12 1
外部発表はい
イベント2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
継続期間: 2006 12 102006 12 13

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other2006 International Electron Devices Meeting, IEDM
国/地域United States
CitySan Francisco, CA
Period06/12/1006/12/13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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