FLOW-RATE MODULATION EPITAXY OF GaAs.

Naoki Kobayashi, Toshiki Makimoto, Yoshiji Horikoshi

研究成果: Chapter

95 引用 (Scopus)

抄録

The authors propose a flow-rate modulation epitaxy method which yields high-purity GaAs layers with improved growth rate controllability. This method is based on an alternate gas flow of triethyl gallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. The most characteristic aspect of this method is that a very small amount of AsH//3 is added during the TEG flow period. This small amount of AsH//3 suppresses the formation of arsenic vacancies near the growing surface, and thus reduces the incorporation of impurity atoms. As a result, we could obtain high purity GaAs layer at relatively low growth temperatures.

元の言語English
ホスト出版物のタイトルJapanese Journal of Applied Physics, Part 2: Letters
ページ962-964
ページ数3
24
エディション12
出版物ステータスPublished - 1985 12
外部発表Yes

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Gallium
Epitaxial growth
Flow rate
Modulation
Growth temperature
Controllability
Arsenic
Vacancies
Flow of gases
Impurities
Atoms
Hydrogen
Gases

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Kobayashi, N., Makimoto, T., & Horikoshi, Y. (1985). FLOW-RATE MODULATION EPITAXY OF GaAs.Japanese Journal of Applied Physics, Part 2: Letters (12 版, 巻 24, pp. 962-964)

FLOW-RATE MODULATION EPITAXY OF GaAs. / Kobayashi, Naoki; Makimoto, Toshiki; Horikoshi, Yoshiji.

Japanese Journal of Applied Physics, Part 2: Letters. 巻 24 12. 編 1985. p. 962-964.

研究成果: Chapter

Kobayashi, N, Makimoto, T & Horikoshi, Y 1985, FLOW-RATE MODULATION EPITAXY OF GaAs.Japanese Journal of Applied Physics, Part 2: Letters. 12 Edn, 巻. 24, pp. 962-964.
Kobayashi N, Makimoto T, Horikoshi Y. FLOW-RATE MODULATION EPITAXY OF GaAs. : Japanese Journal of Applied Physics, Part 2: Letters. 12 版 巻 24. 1985. p. 962-964
Kobayashi, Naoki ; Makimoto, Toshiki ; Horikoshi, Yoshiji. / FLOW-RATE MODULATION EPITAXY OF GaAs. Japanese Journal of Applied Physics, Part 2: Letters. 巻 24 12. 版 1985. pp. 962-964
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