Flow-rate modulation epitaxy of GaAs

Naoki Kobayashi, Toshiki Makimoto, Yoshiji Horikoshi

研究成果: Article

97 引用 (Scopus)

抜粋

We propose a flow-rate modulation epitaxy method which yields high-purity GaAs layers with improved growth rate controllability. This method is based on an alternate gas flow of triethyl gallium (TEG) and arsine (AsH3) by using hydrogen carrier gas. The most characteristic point of this method is that a very small amount of AsH3 is added during the TEG flow period. This small amount of AsH3 suppresses the formation of arsenic vacancies near the growing surface, and thus reduces the incorporation of impurity atoms. As a result, we could obtain high purity GaAs layer at relatively low growth temperatures.

元の言語English
ページ(範囲)L962-L964
ジャーナルJapanese journal of applied physics
24
発行部数12
DOI
出版物ステータスPublished - 1985 12
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント Flow-rate modulation epitaxy of GaAs' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用