Flow-rate modulation epitaxy of GaAs

Naoki Kobayashi, Toshiki Makimoto, Yoshiji Horikoshi

研究成果: Article査読

99 被引用数 (Scopus)

抄録

We propose a flow-rate modulation epitaxy method which yields high-purity GaAs layers with improved growth rate controllability. This method is based on an alternate gas flow of triethyl gallium (TEG) and arsine (AsH3) by using hydrogen carrier gas. The most characteristic point of this method is that a very small amount of AsH3 is added during the TEG flow period. This small amount of AsH3 suppresses the formation of arsenic vacancies near the growing surface, and thus reduces the incorporation of impurity atoms. As a result, we could obtain high purity GaAs layer at relatively low growth temperatures.

本文言語English
ページ(範囲)L962-L964
ジャーナルJapanese journal of applied physics
24
12
DOI
出版ステータスPublished - 1985 12
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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