FLOW-RATE MODULATION EPITAXY OF GaAs.

N. Kobayashi; T. Makimoto; Y. Horikoshi

FLOW-RATE MODULATION EPITAXY OF GaAs.

N. Kobayashi, T. Makimoto, Y. Horikoshi

研究成果: Conference contribution

抄録

We propose a Flow-rate Modulation Epitaxy (FME) method for preparing GaAs thin films with an atomic-order accuracy. This method is based on an alternate gas flow of triethylgallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. However, unlike the atomic layer epitaxy methods reported so far, the AsH//3 flow was not completely stopped. Instead, a very small amount was added during the TEG flow period.

本文言語	English
ホスト出版物のタイトル	Institute of Physics Conference Series
ページ	737-738
ページ数	2
版	79
出版ステータス	Published - 1986 12 1
外部発表	はい

出版物シリーズ

名前	Institute of Physics Conference Series
番号	79
ISSN（印刷版）	0373-0751

ASJC Scopus subject areas

Physics and Astronomy(all)

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引用スタイル

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