抄録
We propose a Flow-rate Modulation Epitaxy (FME) method for preparing GaAs thin films with an atomic-order accuracy. This method is based on an alternate gas flow of triethylgallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. However, unlike the atomic layer epitaxy methods reported so far, the AsH//3 flow was not completely stopped. Instead, a very small amount was added during the TEG flow period.
本文言語 | English |
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ホスト出版物のタイトル | Institute of Physics Conference Series |
ページ | 737-738 |
ページ数 | 2 |
版 | 79 |
出版ステータス | Published - 1986 12月 1 |
外部発表 | はい |
出版物シリーズ
名前 | Institute of Physics Conference Series |
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番号 | 79 |
ISSN(印刷版) | 0373-0751 |
ASJC Scopus subject areas
- 物理学および天文学(全般)