We propose a Flow-rate Modulation Epitaxy (FME) method for preparing GaAs thin films with an atomic-order accuracy. This method is based on an alternate gas flow of triethylgallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. However, unlike the atomic layer epitaxy methods reported so far, the AsH//3 flow was not completely stopped. Instead, a very small amount was added during the TEG flow period.
|ホスト出版物のタイトル||Institute of Physics Conference Series|
|出版ステータス||Published - 1986 12 1|
|名前||Institute of Physics Conference Series|
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