抄録
We propose a Flow-rate Modulation Epitaxy (FME) method for preparing GaAs thin films with an atomic-order accuracy. This method is based on an alternate gas flow of triethylgallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. However, unlike the atomic layer epitaxy methods reported so far, the AsH//3 flow was not completely stopped. Instead, a very small amount was added during the TEG flow period.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | Institute of Physics Conference Series |
| ページ | 737-738 |
| ページ数 | 2 |
| 版 | 79 |
| 出版ステータス | Published - 1986 12 1 |
| 外部発表 | はい |
出版物シリーズ
| 名前 | Institute of Physics Conference Series |
|---|---|
| 番号 | 79 |
| ISSN（印刷版） | 0373-0751 |
ASJC Scopus subject areas
- 物理学および天文学（全般）