FLOW-RATE MODULATION EPITAXY OF GaAs.

N. Kobayashi, T. Makimoto, Y. Horikoshi

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We propose a Flow-rate Modulation Epitaxy (FME) method for preparing GaAs thin films with an atomic-order accuracy. This method is based on an alternate gas flow of triethylgallium (TEG) and arsine (AsH//3) by using hydrogen carrier gas. However, unlike the atomic layer epitaxy methods reported so far, the AsH//3 flow was not completely stopped. Instead, a very small amount was added during the TEG flow period.

本文言語English
ホスト出版物のタイトルInstitute of Physics Conference Series
ページ737-738
ページ数2
79
出版ステータスPublished - 1986 12 1
外部発表はい

出版物シリーズ

名前Institute of Physics Conference Series
番号79
ISSN(印刷版)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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