Flow-rate modulation epitaxy of GaAs and AlGaAs

Naoki Kobayashi*, Toshiki Makimoto, Yoshiharu Yamauchi, Yoshiji Horikoshi

*この研究の対応する著者

研究成果: Article査読

37 被引用数 (Scopus)

抄録

Flow-rate modulation epitaxy (FME) is a new epitaxial growth method which can produce a very flat heterointerface and a sharp doping profile. This paper describes FME growth conditions and electrical and optical properties of FME-grown GaAs, AlGaAs layers, and GaAs/AlGaAs single-quantum-well heterostructures. FME can reduce growth temperatures without deteriorating the crystalline quality and can produce flatter heterointerfaces than the metalorganic chemical vapor deposition method. The catalytic decomposition of silane on the Ga atomic surface efficiently dopes silicon into GaAs and AlGaAs with sharp profiles. For p-type doping, trimethyl metalorganic sources produce carbon atomic layer doping with no memory effect and a low diffusion coefficient of carbon. Experiments using FME to grow modulation doped heterostructures and heterostructure bipolar transistors prove FME to be a promising method of producing III-V semiconductor devices with thin-layered structures.

本文言語English
ページ(範囲)640-651
ページ数12
ジャーナルJournal of Applied Physics
66
2
DOI
出版ステータスPublished - 1989 12月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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