Flow-rate modulation epitaxy of GaAs

Engineering & Materials Science

• Arsenic 52%
• Atoms 36%
• Controllability 36%
• Epitaxial growth 98%
• Flow of gases 33%
• Flow rate 52%
• Gallium 100%
• Gases 20%
• Growth temperature 56%
• Hydrogen 28%
• Impurities 33%
• Modulation 54%
• Vacancies 47%

Physics & Astronomy

• arsenic 37%
• atoms 17%
• controllability 41%
• epitaxy 69%
• flow velocity 56%
• gallium 72%
• gas flow 32%
• gases 18%
• hydrogen 21%
• impurities 23%
• modulation 46%
• purity 60%
• temperature 10%