Flow-rate modulation epitaxy of wurtzite AlBN

Tetsuya Akasaka*, Toshiki Makimoto

*この研究の対応する著者

研究成果: Article査読

31 被引用数 (Scopus)

抄録

Wurtzite AlBN thin films were fabricated using flow-rate modulation epitaxy (FME), wherein group-III and group-V sources are alternatively supplied to the growing surface. A 350-nm -thick wurtzite Al1-x Bx N (x∼0.015) film grown by FME exhibited a single sharp peak in the ω-2θ scan of x-ray diffraction, a smooth surface with the root-mean-square roughness of 3.4 nm, and a sharp epitaxial interface with SiC(0001) substrate, whereas that prepared by conventional metalorganic chemical vapor deposition contained faceted columnar AlBN (1 1_ 01) crystallites several ten nanometers in width in an AlBN(0001) matrix. FME is useful for fabricating high-quality wurtzite AlBN thin films, because it suppresses polycrystallization through enhancement of the surface migration of boron atoms.

本文言語English
論文番号041902
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
88
4
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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