In this study, a partially fluorine-terminated solution-gate field-effect transistor sensor with a smaller amount of unexpectedly generated fluorohydrocarbon film on a polycrystalline diamond channel is described. A conventional method utilizing inductively coupled plasma with fluorocarbon gas leads the hydrogen-terminated diamond to transfer to a partially fluorine-terminated diamond (C–F diamond); an unexpected fluorohydrocarbon film is formed on the surface of the diamond. To overcome this issue, we newly applied fluorine gas for the fluoridation of the diamond. Analytical results of X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry suggest that the fluorocarbon film does not exist or only a smaller amount of fluorocarbon film exists on the diamond surface. Conversely, the C–F diamond fabricated by the conventional method of inductively coupled plasma with a perfluoropropane gas (C3F8 gas) source possesses a certain amount of fluorocarbon film on its surface. The C–F diamond with a smaller amount of unexpectedly generated fluorohydrocarbon film possesses nearly ideal drain–source–voltage vs. gate–source– current characteristics, corresponding to metal–oxide–silicon semiconductor field-effect transistor theory. The results indicate that the fluorine gas (F2 gas) treatment proposed in this study effectively fabricates a C–F diamond sensor without unexpected semiconductor damage.
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