Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor

Y. J. Zhang, J. T. Ye, Y. Yomogida, T. Takenobu, Y. Iwasa

    研究成果: Article査読

    155 被引用数 (Scopus)

    抄録

    Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A bias-independent p-n junction was formed, and it displayed rectifying I-V characteristics. This p-n diode could perform a crucial role in the development of optoelectronic valleytronic devices.

    本文言語English
    ページ(範囲)3023-3028
    ページ数6
    ジャーナルNano Letters
    13
    7
    DOI
    出版ステータスPublished - 2013 7 10

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Bioengineering
    • Chemistry(all)
    • Materials Science(all)
    • Mechanical Engineering

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