Formation of a thin SiO2 film using synchrotron radiation excited reaction

Taro Ogawa; Isao Ochiai; Kozo Mochiji; Atsushi Hiraiwa; Yuji Takakuwa; Michio Niwano; Nobuo Miyamoto

doi:10.1063/1.105345

Formation of a thin SiO₂ film using synchrotron radiation excited reaction

Taro Ogawa^*, Isao Ochiai, Kozo Mochiji, Atsushi Hiraiwa, Yuji Takakuwa, Michio Niwano, Nobuo Miyamoto

^*この研究の対応する著者

研究成果: Article › 査読

11 被引用数 (Scopus)

抄録

The possibility of altering an oxygen-adsorbed Si surface to SiO ₂ using a synchrotron radiation (SR) excited reaction is evidenced for the first time. Oxygen gas is adsorbed on a clean Si surface, and soft x-ray is irradiated on it by SR. As a result, H partly terminated on the oxygen-adsorbed Si surface is eliminated and the surface becomes more SiO ₂-like. This is proved by x-ray photoelectron spectroscopy (XPS) analysis. Photostimulated desorption (PSD) of H⁺ ions, which are emitted from the surface, is also detected during SR irradiation. The Si - O bond formation model followed by H⁺ PSD explains this oxidation.

本文言語	English
ページ（範囲）	794-796
ページ数	3
ジャーナル	Applied Physics Letters
巻	59
号	7
DOI	https://doi.org/10.1063/1.105345
出版ステータス	Published - 1991
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.105345

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引用スタイル

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abstract = "The possibility of altering an oxygen-adsorbed Si surface to SiO 2 using a synchrotron radiation (SR) excited reaction is evidenced for the first time. Oxygen gas is adsorbed on a clean Si surface, and soft x-ray is irradiated on it by SR. As a result, H partly terminated on the oxygen-adsorbed Si surface is eliminated and the surface becomes more SiO 2-like. This is proved by x-ray photoelectron spectroscopy (XPS) analysis. Photostimulated desorption (PSD) of H+ ions, which are emitted from the surface, is also detected during SR irradiation. The Si - O bond formation model followed by H+ PSD explains this oxidation.",

author = "Taro Ogawa and Isao Ochiai and Kozo Mochiji and Atsushi Hiraiwa and Yuji Takakuwa and Michio Niwano and Nobuo Miyamoto",

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T1 - Formation of a thin SiO2 film using synchrotron radiation excited reaction

AU - Ogawa, Taro

AU - Ochiai, Isao

AU - Mochiji, Kozo

AU - Hiraiwa, Atsushi

AU - Takakuwa, Yuji

AU - Niwano, Michio

AU - Miyamoto, Nobuo

PY - 1991

Y1 - 1991

N2 - The possibility of altering an oxygen-adsorbed Si surface to SiO 2 using a synchrotron radiation (SR) excited reaction is evidenced for the first time. Oxygen gas is adsorbed on a clean Si surface, and soft x-ray is irradiated on it by SR. As a result, H partly terminated on the oxygen-adsorbed Si surface is eliminated and the surface becomes more SiO 2-like. This is proved by x-ray photoelectron spectroscopy (XPS) analysis. Photostimulated desorption (PSD) of H+ ions, which are emitted from the surface, is also detected during SR irradiation. The Si - O bond formation model followed by H+ PSD explains this oxidation.

AB - The possibility of altering an oxygen-adsorbed Si surface to SiO 2 using a synchrotron radiation (SR) excited reaction is evidenced for the first time. Oxygen gas is adsorbed on a clean Si surface, and soft x-ray is irradiated on it by SR. As a result, H partly terminated on the oxygen-adsorbed Si surface is eliminated and the surface becomes more SiO 2-like. This is proved by x-ray photoelectron spectroscopy (XPS) analysis. Photostimulated desorption (PSD) of H+ ions, which are emitted from the surface, is also detected during SR irradiation. The Si - O bond formation model followed by H+ PSD explains this oxidation.

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