抄録
We investigated the dependence of transport characteristics of a two-dimensional electron gas (2DEG) on channel depth in an inverted undoped GaAs/AlGaAs heterostructure. We succeeded in forming a high-mobility 2DEG in a sample with 70 nm channel depth. We controlled the carrier density by varying the back-gate bias over a wide range. The highest mobility reached 2.3 × 106 cm2/Vs at 3.4 × 1011 cm-2. The relation between mobility and carrier density is determined: the mobility decreases in a low-carrier-density region as the channel depth decreases. This result suggests that the scattering due to the remote surface charges plays a more significant role.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 952-954 |
| ページ数 | 3 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 87 |
| 発行部数 | 2 |
| 出版物ステータス | Published - 2000 1 15 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
これを引用
Formation of a two-dimensional electron gas in an inverted undoped heterostructure with a shallow channel depth. / Kawaharazuka, A.; Saku, T.; Hirayama, Y.; Horikoshi, Y.
：: Journal of Applied Physics, 巻 87, 番号 2, 15.01.2000, p. 952-954.研究成果: Article
}
TY - JOUR
T1 - Formation of a two-dimensional electron gas in an inverted undoped heterostructure with a shallow channel depth
AU - Kawaharazuka, A.
AU - Saku, T.
AU - Hirayama, Y.
AU - Horikoshi, Y.
PY - 2000/1/15
Y1 - 2000/1/15
N2 - We investigated the dependence of transport characteristics of a two-dimensional electron gas (2DEG) on channel depth in an inverted undoped GaAs/AlGaAs heterostructure. We succeeded in forming a high-mobility 2DEG in a sample with 70 nm channel depth. We controlled the carrier density by varying the back-gate bias over a wide range. The highest mobility reached 2.3 × 106 cm2/Vs at 3.4 × 1011 cm-2. The relation between mobility and carrier density is determined: the mobility decreases in a low-carrier-density region as the channel depth decreases. This result suggests that the scattering due to the remote surface charges plays a more significant role.
AB - We investigated the dependence of transport characteristics of a two-dimensional electron gas (2DEG) on channel depth in an inverted undoped GaAs/AlGaAs heterostructure. We succeeded in forming a high-mobility 2DEG in a sample with 70 nm channel depth. We controlled the carrier density by varying the back-gate bias over a wide range. The highest mobility reached 2.3 × 106 cm2/Vs at 3.4 × 1011 cm-2. The relation between mobility and carrier density is determined: the mobility decreases in a low-carrier-density region as the channel depth decreases. This result suggests that the scattering due to the remote surface charges plays a more significant role.
UR - http://www.scopus.com/inward/record.url?scp=0000535255&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000535255&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0000535255
VL - 87
SP - 952
EP - 954
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 2
ER -