抄録
We investigated the dependence of transport characteristics of a two-dimensional electron gas (2DEG) on channel depth in an inverted undoped GaAs/AlGaAs heterostructure. We succeeded in forming a high-mobility 2DEG in a sample with 70 nm channel depth. We controlled the carrier density by varying the back-gate bias over a wide range. The highest mobility reached 2.3 × 106 cm2/Vs at 3.4 × 1011 cm-2. The relation between mobility and carrier density is determined: the mobility decreases in a low-carrier-density region as the channel depth decreases. This result suggests that the scattering due to the remote surface charges plays a more significant role.
本文言語 | English |
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ページ(範囲) | 952-954 |
ページ数 | 3 |
ジャーナル | Journal of Applied Physics |
巻 | 87 |
号 | 2 |
出版ステータス | Published - 2000 1月 15 |
ASJC Scopus subject areas
- 物理学および天文学(全般)
- 物理学および天文学(その他)