Formation of a two-dimensional electron gas in an inverted undoped heterostructure with a shallow channel depth

A. Kawaharazuka, T. Saku, Y. Hirayama, Y. Horikoshi

研究成果: Article査読

16 被引用数 (Scopus)

抄録

We investigated the dependence of transport characteristics of a two-dimensional electron gas (2DEG) on channel depth in an inverted undoped GaAs/AlGaAs heterostructure. We succeeded in forming a high-mobility 2DEG in a sample with 70 nm channel depth. We controlled the carrier density by varying the back-gate bias over a wide range. The highest mobility reached 2.3 × 106 cm2/Vs at 3.4 × 1011 cm-2. The relation between mobility and carrier density is determined: the mobility decreases in a low-carrier-density region as the channel depth decreases. This result suggests that the scattering due to the remote surface charges plays a more significant role.

本文言語English
ページ(範囲)952-954
ページ数3
ジャーナルJournal of Applied Physics
87
2
出版ステータスPublished - 2000 1 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

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