Formation of SiGe and SiGeC layers on Si by Ge and C ion implantation and subsequent ion-beam-induced epitaxial crystallization
Naoto Kobayashi*, Masataka Hasegawa, J. R. Phillips, Nobuyuki Hayashi, Hisao Tanoue, Hajime Shibata, Yunosuke Makita
*この研究の対応する著者
研究成果: Conference contribution
3
被引用数
(Scopus)