Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy

T. Onuma, T. Shibata, K. Kosaka, K. Asai, S. Sumiya, M. Tanaka, Takayuki Sota, A. Uedono, S. F. Chichibu

    研究成果: Article

    46 引用 (Scopus)

    抄録

    Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2 O3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (∼1× 108 cm-2) AlN film. From the energy difference between the ground-state and the first excited states, the hydrogenic A -exciton binding energy in the present compressively strained (Δa/a≈-1.68%) AlN was estimated to be approximately 51 meV.

    元の言語English
    記事番号023529
    ジャーナルJournal of Applied Physics
    105
    発行部数2
    DOI
    出版物ステータスPublished - 2009

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    vapor phase epitaxy
    low pressure
    fine structure
    excitons
    cathodoluminescence
    binding energy
    reflectance
    ground state
    excitation
    energy

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    これを引用

    Onuma, T., Shibata, T., Kosaka, K., Asai, K., Sumiya, S., Tanaka, M., ... Chichibu, S. F. (2009). Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 105(2), [023529]. https://doi.org/10.1063/1.3068335

    Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy. / Onuma, T.; Shibata, T.; Kosaka, K.; Asai, K.; Sumiya, S.; Tanaka, M.; Sota, Takayuki; Uedono, A.; Chichibu, S. F.

    :: Journal of Applied Physics, 巻 105, 番号 2, 023529, 2009.

    研究成果: Article

    Onuma, T, Shibata, T, Kosaka, K, Asai, K, Sumiya, S, Tanaka, M, Sota, T, Uedono, A & Chichibu, SF 2009, 'Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy', Journal of Applied Physics, 巻. 105, 番号 2, 023529. https://doi.org/10.1063/1.3068335
    Onuma, T. ; Shibata, T. ; Kosaka, K. ; Asai, K. ; Sumiya, S. ; Tanaka, M. ; Sota, Takayuki ; Uedono, A. ; Chichibu, S. F. / Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy. :: Journal of Applied Physics. 2009 ; 巻 105, 番号 2.
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    abstract = "Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2 O3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (∼1× 108 cm-2) AlN film. From the energy difference between the ground-state and the first excited states, the hydrogenic A -exciton binding energy in the present compressively strained (Δa/a≈-1.68{\%}) AlN was estimated to be approximately 51 meV.",
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    AU - Onuma, T.

    AU - Shibata, T.

    AU - Kosaka, K.

    AU - Asai, K.

    AU - Sumiya, S.

    AU - Tanaka, M.

    AU - Sota, Takayuki

    AU - Uedono, A.

    AU - Chichibu, S. F.

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    AB - Exciton fine structures were observed in partially polarized optical reflectance and cathodoluminescence (CL) spectra of AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy on (0001) Al2 O3 substrates. A few free and four bound exciton lines were clearly resolved in the low-temperature CL spectra of the lowest threading dislocation density (∼1× 108 cm-2) AlN film. From the energy difference between the ground-state and the first excited states, the hydrogenic A -exciton binding energy in the present compressively strained (Δa/a≈-1.68%) AlN was estimated to be approximately 51 meV.

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