Full-scale whole device EMC/MD simulation of Si nanowire transistor including source and drain regions by utilizing graphic processing units

Akito Suzuki, Takanobu Watanabe, Yoshinari Kamakura, Takefumi Kamioka

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We have realized the full-scale whole device EMC/MD simulation including source and drain regions by utilizing graphic processing unit. The transfer characteristic of a gate-all-around nanowire Si MOSFET is simulated by reproducing the field effect of the surrounding gate electrode with spreading charged particles on the gate insulator layer. We have found an appreciable impact of the random dopant distribution (RDF) in source and drain regions on the drain current variability. Furthermore, the dynamic fluctuation of the drain current is found to be increase as the channel length decreases. The EMC/MD simulation powered by GPU is a useful method to investigate the dynamic fluctuation as well as the statistical device-to-device variability of nano-scale FETs.

本文言語English
ホスト出版物のタイトルInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
出版社Institute of Electrical and Electronics Engineers Inc.
ページ357-360
ページ数4
ISBN(電子版)9781479952885
DOI
出版ステータスPublished - 2014 10 20
イベント2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014 - Yokohama, Japan
継続期間: 2014 9 92014 9 11

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2014 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014
CountryJapan
CityYokohama
Period14/9/914/9/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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